bipolar semiconductor
英 [ˌbaɪˈpəʊlə(r) ˌsemikənˈdʌktə(r)]
美 [ˌbaɪˈpoʊlər ˈsemikəndʌktər]
网络 双极型半导体; 双极半导体
双语例句
- A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。 - Analysis of the Space Charge Capacitance of Bipolar Semiconductor Passive Films(ⅱ)
双极性半导体钝化膜空间电荷电容分析（Ⅱ） - Families and products of bipolar memory for semiconductor integrated circuits
GB/T3438-1982半导体集成电路双极型存储器系列和品种 - The heterojunction bipolar transistor ( HBT) is a novel superhigh speed micro-and milli-meter wave semiconductor device. It can achieve both high speed and high amplification, which is always a conflict in homojunction bipolar transistors.
异质结双极晶体管（HBT）是一种新型的超高速、微波与毫米波半导体器件，可以有效地解决同质结双极晶体管中高速度与高放大的关系。 - The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.
用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。 - In this paper, the design principle of heterojunction bipolar transistors ( HBTs), including energy band gap design and semiconductor material selection as well as device structure design, are discussed in more detail.
本文较详细地讨论了异质结晶体管的设计原理、材料选用和结构设计。 - The IGBT full name is Insulate Gate Bipolar Transistor, namely the insulation grid bipolar transistor, it is new semiconductor devices which rapidly develop in recent years.
IGBT的全称是InsulateGateBipolarTransistor，即绝缘栅双极晶体管，是近年来迅速发展起来的新型半导体器件。